JH60E-High Resistance Hall Effect Test System
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JH60E Hall Effect Tester - High Resistance Type
Product Description:
The instrument system consists of electromagnet, electromagnet power supply, high precision constant current source high precision voltmeter, Hall effect sample holder, standard sample, high and low temperature Dewar, temperature controller and system software. The JH10 effect meter specially developed for this instrument system integrates a constant current source, a six-and-a-half-digit microvoltmeter and a complex switching relay-switch for Hall measurement, which greatly simplifies the connection and operation of the experiment. JH10 can be used alone as a constant current source and a microvoltmeter. It is used to measure important parameters such as carrier concentration, mobility, resistivity, and Hall coefficient of semiconductor materials. These parameters must be controlled in advance to understand the electrical properties of semiconductor materials. Therefore, the Hall effect test system is to understand and study semiconductor devices. It is a must-have tool for the electrical properties of semiconductor materials. The experimental results are automatically calculated by the software, and the Bulk Carrier Concentration, Sheet Carrier Concentration, Mobility, Resistivity, and Hall Coefficient can be obtained at the same time. Coefficient), magnetoresistance), etc.
Technical Indicators:
* Magnetic field: 10mm spacing is 2T; 30mm spacing is 1T
* Sample current: 0.05uA~50mA (adjust 0.1nA)
* Measuring voltage: 0.1uV~30V
* Provide various test standard materials, various grades of silicon and gallium arsenide (different sensitivity and precision)
* Minimum resolution: 0.1GS
* Magnetic field range: 0-1T
* With the Gauss meter or data acquisition board can communicate with computer
* I-V curve and I-R curve measurement, etc.
* Variation curve of parameters such as Hall coefficient and carrier concentration with temperature
* Resistivity range：5*10-4~108Ω.cm
* Resistance range：10 mΩ-100GΩ
* carrier concentration：6*108~1023cm-3
* mobility：1~106cm2/vs
* Temperature control accuracy: 0.1K
* Temperature zone: 4K-773K (optional)
* Hall coefficient：±1*10-5~±1*1010cm3/C
* Fully automated testing, one-click processing
*Continuous measurement between the same temperature difference can be achieved
Each System Parameter:
High Precision Electromagnet:
Pole diameter 100mm;
When the N, S distance is 10mm, the maximum magnetic field is 20000Gs;
When the N, S spacing is 20mm, the maximum is 13000 Gauss;
The maximum magnetic field is 10000 gauss when the distance between N and S is 30mm;
Uniformity area: 10mm diameter uniformity range at 60mm spacing; 1%
Weight 110 kg with bracket and wheels
High Precision Bipolar Constant Current Power Supply:
Output: ±10A±80V power; 800W
① The output current of the power supply can be continuously changed between positive and negative rated maximum currents
② The current can smoothly cross the zero point, non-switching commutation
③ Four-quadrant operation of output current and voltage (suitable for inductive loads)
④ The current change rate can be set from 0.0007 to 0.3 F.S./s (F.S. is the rated maximum output current)
※ High current stability and low ripple
①Current stability: better than ±25ppm/h (standard type); better than ±5ppm/h (high stability type)
② Current accuracy: ±(0.01% set value + 1mA)
③ Current resolution: 20 bit, for example 15A power supply, current resolution is 0.03mA
④ Source effect: ≤ 2.0×10-5 F.S. (when the supply voltage changes by 10%, the output current changes)
⑤ Load effect: ≤ 2.0×10-5 F.S. (when the load changes by 10%, the output current changes)
⑥ Current ripple (RMS): less than 1mA
High Precision Gauss Meter:
Accuracy: ±0.30% of reading;
Resolution: 0.01mT Range: 0-3T;
Probe thickness: 1.0mm;
Length 100mm digital;
Rs-232 interface data reading software with GP3 probe
Gauss meter probe holder and sample holder All-aluminum non-magnetically conductive holder 5-70mm adjustable
Sample holder fixture (customized upon request)
Hall effect system software can digitally adjust the magnetic field and current, and test various material parameters
High Temperature Thermostat：
(293K-470K) High and low temperature vacuum container
TESK301 Temperature Controller:
Temperature control (65k-600k)
Vacuum Pump K25 Vacuum Pump
Constant current source and test table
Constant current source range: ±50nA-±50mA;
Resolution 0.1nA continuously adjustable within the range;
High-precision voltage data acquisition instrument range 0. 1uV-30V
Accuracy: 0.01%
Built-in test matrix conversion card;
Ohmic contact kits make kits based on ohmic contacts of different materials
System Composition:
The high resistance Hall effect test system consists of electromagnet, vacuum pump, high temperature vacuum chamber, Gauss meter, constant current source, electromagnet current source, temperature controller, computer and software. Among them, the electromagnet current source provides current to the electromagnet to generate a magnetic field; the Gauss meter measures the uniform magnetic field value generated by the electromagnet; the constant current source provides the sample test current for the sample on the one hand, which is used for the Hall effect test, and on the other hand, is used to measure the sample Feedback Hall voltage; the sample to be tested is placed in a high-temperature vacuum chamber, fixed by high-temperature glue, and used as four test points; 4 wires are drawn out of the high-temperature vacuum chamber, and two are connected to a temperature controller for temperature measurement and control. One is the high-temperature probe lead connected to the Gauss meter, and the other is the Hall sample connection line connected to the constant current source; the computer is connected to the Gauss meter, the temperature controller, the constant current source and the electromagnet current source, which is realized by software. Control the current and magnetic field values passing through the sample under test, and obtain the measured voltage value.
Semiconductor materials: SiGe, SiC, InAs, InGaAs, InP, AlGaAs, HgCdTe and ferrite materials, etc.
High impedance materials: semi-insulating GaAs, GaN, CdTe, etc.
